MBE growth of Bi2Te3 for Thermoelectrics
Paper in proceedings, 2013

Molecular beam epitaxy of Bi2Te3 on various substrates for thermoelectric applications is investigated. Growth conditions were optimized based on Si(111) substrates with two different growth techniques, co-deposition followed by crystallization and direct growth. Growth of Bi 2Te3 on GaAs, GaN, et. al. substrates with different crystal directions and offcut angles were investigated. High quality Bi2Te3 thin films were achieved with very low carrier density and record high carrier mobility.

Author

Yuxin Song

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Chinese Academy of Sciences

Sophie Charpentier

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Attila Fülöp

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Maria Ekström

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

luca galletti

University of Naples Federico II

Consiglo Nazionale Delle Richerche

Thilo Bauch

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Floriana Lombardi

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Shu Min Wang

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Chinese Academy of Sciences

Asia Communications and Photonics Conference, ACP

2162108X (ISSN)

Asia Communications and Photonics Conference, ACP2013
Beijing, China,

Subject Categories

Materials Engineering

DOI

10.1364/acpc.2013.ath4k.1

More information

Latest update

9/11/2020