A 140 GHz Transmitter with an Integrated Chip-to-Waveguide Transition using 130nm SiGe BiCMOS Process
Paper in proceedings, 2018

This paper presents a 140 GHz transmitter chipset realized in a 130 nm SiGe BiCMOS technology with f(t)/f(max) values of 250 GHz/ 370 GHz. This design comprises of a frequency sixtupler, a balanced transconductance mixer, an amplifier and chip-to-waveguide transition. The frequency multiplier operates in wide frequency band from 110-147 GHz, while the amplifier operates between 115-155 GHz. The total DC power consumption of the chipset is 420 mW. The chip size is 3 mm x 0.73 mm including chip-to-waveguide transition. The transmitter gives -4 dBm output power at 140 GHz and can operate between 129-148 GHz. Wireless data transmission up to 6 Gbps is measured using PSK and QAM modulation schemes.

SiGe BiCMOS

D-band

mixer

transmitter chipset

chip-to-waveguide transition

Author

Zhongxia Simon He

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Mingquang Bao

Ericsson

Yinggang Li

Ericsson

Ahmed Adel Hassona

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

James Campion

Royal Institute of Technology (KTH)

Joachim Oberhammer

Royal Institute of Technology (KTH)

Herbert Zirath

Ericsson

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Asia Pacific Microwave Conference-Proceedings

28-30

Asia-Pacific Microwave Conference (APMC)
Kyoto, Japan,

Micromachined terahertz systems -a new heterogeneous integration platform enabling the commercialization of the THz frequency spectrum (M3TERA)

European Commission (Horizon 2020), 2015-02-01 -- 2017-12-31.

Subject Categories

Telecommunications

Communication Systems

Other Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.23919/APMC.2018.8617372

ISBN

9784902339451

More information

Latest update

8/23/2019