A 300-mu W Cryogenic HEMT LNA for Quantum Computing
Paper in proceeding, 2020

This paper reports on ultra-low power 4-8 GHz (C-band) InP high-electron mobility transistor (HEMT) cryogenic low-noise amplifiers (LNAs) aimed for qubit amplification in quantum computing. We have investigated dc power dissipation in hybrid three-stage cryogenic LNAs using 100-nm gate length InP HEMTs with different indium content in the channel (65% and 80%). The noise performance at 300 K was found to be comparable for both channel structures. At 5 K, an LNA with 65% indium channel exhibited significantly lower noise temperature at any dc power dissipation compared to the LNA with 80% indium channel. The LNA with 65% indium channel achieved an average noise of 3.2 K with 23 dB gain at an ultra-low power consumption of 300 mu W. To the best of authors' knowledge, the LNA exhibited the lowest noise temperature to date for sub-milliwatt power cryogenic C-band LNAs.

noise

high-electron-mobility transistors (HEMT5)

C-band

low-noise amplifiers (LNAs)

quantum computing

Cryogenic

Author

Eunjung Cha

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Niklas Wadefalk

Low Noise Factory AB

Giuseppe Moschetti

Qamcom Research & Technology

Arsalan Pourkabirian

Low Noise Factory AB

Jörgen Stenarson

Low Noise Factory AB

Jan Grahn

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

PROCEEDINGS OF THE 2020 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS)

0149-645X (ISSN) 2576-7216 (eISSN)

1299-1302

IEEE/MTT-S International Microwave Symposium (IMS)
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Subject Categories

Telecommunications

Signal Processing

Other Electrical Engineering, Electronic Engineering, Information Engineering

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Latest update

5/17/2021