Charge carrier transport in graphene field-effect transistor scaled down to submicron gate lengths
Paper in proceeding, 2022

We present a preliminary study of charge carrier transport in graphene field-effect transistor with gate lengths ranging from 2 μm down to 0.2 μm applying a model of the quasi-ballistic charge carrier transport. The analysis indicates that, in particular, at the gate length of 0.2 μm the fraction of the ballistic carriers can be up to 60 %. Our finding can be used as a guidance for further development of the graphene field-effect transistors with submicron gate length for variety of the advanced and emerging applications.

field-effect transistor

graphene

charge carrier mobility

quasi-ballistic transport

Author

Isabel Harrysson Rodrigues

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Andrei Vorobiev

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

2022 Compound Semiconductor Week, CSW 2022


9781665453400 (ISBN)

Compound Semiconductor Week 2022
Ann Arbor, USA,

Graphene Core Project 3 (Graphene Flagship)

European Commission (EC) (EC/H2020/881603), 2020-04-01 -- 2023-03-31.

Subject Categories

Condensed Matter Physics

DOI

10.1109/CSW55288.2022.9930439

More information

Latest update

1/3/2024 9