On the relation between rf noise and subthreshold swing in InP HEMTs for cryogenic LNAs
Paper in proceeding, 2022
4 - 8 GHz low-noise amplifiers (LNAs) based on InP high electron mobility transistors (InP HEMTs) with different spacer thickness in the InAlAs-InGaAs heterostructure were fabricated and characterized at 5 K. A variation in the lowest average noise temperature of the LNA was observed with spacer thickness. We here report that the subthreshold swing (SS) at 5 K for the HEMT exhibited similar dependence with spacer thickness as the lowest average noise temperature of the LNA. This suggests that low-temperature characterization of SS for the HEMT can be used as a rapid assessment of anticipated noise performance in the cryogenic HEMT LNA.
InP HEMT
subthreshold swing
low-noise amplifier
noise
Cryogenic
Author
Junjie Li
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
Arsalan Pourkabirian
Low Noise Factory AB
Johan Bergsten
Low Noise Factory AB
Niklas Wadefalk
Low Noise Factory AB
Jan Grahn
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
Asia-Pacific Microwave Conference Proceedings, APMC
10-12
978-4-902339-56-7 (ISBN)
Asia-Pacific Microwave Conference (APMC)
Yokohama, Japan,
Yokohama, Japan,
Infrastructure
Kollberg Laboratory
Nanofabrication Laboratory
Subject Categories
Electrical Engineering, Electronic Engineering, Information Engineering
Nano Technology