HfO2 for strained-Si and strained-SiGe MOSFETs
Paper in proceeding, 2003
We report on HfO2 gate dielectrics grown by atomic layer deposition (ALD) at 600°C on strained-Si and strained-SiGe layers. The strain status in the Si layer remained unaltered after HfO2 deposition and an interface state density of ~1×1011 cm-2 eV-1 was obtained for the case of thick HfO2 films. The breakdown fields were in the range 2-5 MV/cm, which is high compared to HfO2 films grown at higher temperatures. The leakage current was reduced by more than five orders of magnitude for the case of a thin HfO2 film with an EOT of 1.25 nm and ultra-thin cap (2.5-3 nm) layers on Si0.77Ge0.23/Si. The carrier transport through these HfO2 films was found to follow Frenkel-Poole emission over a wide range of applied gate voltage
dielectric thin films
interface states
semiconductor materials
atomic layer deposition
elemental semiconductors
leakage currents
MOSFET
Ge-Si alloys
hafnium compounds
semiconductor device breakdown
silicon
Poole-Frenkel effect
Author
M. Y. A. Yousif
Chalmers, Microtechnology and Nanoscience (MC2), Solid State Electronics
Mikael Johansson
Chalmers, Microtechnology and Nanoscience (MC2), Solid State Electronics
Per Lundgren
Chalmers, Microtechnology and Nanoscience (MC2), Solid State Electronics
Stefan Bengtsson
Chalmers, Microtechnology and Nanoscience (MC2), Solid State Electronics
J. Sundqvist
Uppsala University
Anders Harsta
Uppsala University
H. H. Radamson
Royal Institute of Technology (KTH)
ESSDERC 2003. Proceedings of the 33rd European Solid-State Device Research - ESSDERC '03
1930-8876 (ISSN)
255-0780379993 (ISBN)
Subject Categories
Other Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1109/ESSDERC.2003.1256862
ISBN
0780379993