Electrically controlled spin-switch and evolution of Hanle spin precession in graphene
Journal article, 2019

Next generation of spintronic devices aims to utilize the spin-polarized current injection and transport to control the magnetization dynamics in the spin logic and memory technology. However, the detailed evolution process of the frequently observed bias current-induced sign change phenomenon of the spin polarization has not been examined in details and the underlying microscopic mechanism is not well understood. Here, we report the observation of a systematic evolution of the sign change process of Hanle spin precession signal in the graphene nonlocal spintronic devices at room temperature. By tuning the interface tunnel resistances of the ferromagnetic contacts to graphene, different transformation processes of Hanle spin precession signal are probed in a controlled manner by tuning the injection bias current/voltage. Detailed analysis and first-principles calculations indicate a possible magnetic proximity and the energy dependent electronic structure of the ferromagnet-graphene interface can be responsible for the sign change process of the spin signal and open a new perspective to realize a spin-switch at very low bias-current or voltage.

magnetic proximity effect

spintronics

graphene

Hanle spin precession

spin injection

Author

Bing Zhao

University of Science and Technology Beijing

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Dmitrii Khokhriakov

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Bogdan Karpiak

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Anamul Md Hoque

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Lei Xu

National University of Singapore (NUS)

Lei Shen

National University of Singapore (NUS)

Yuan Ping Peng

National University of Singapore (NUS)

Xiaoguang Xu

University of Science and Technology Beijing

Yong Jiang

University of Science and Technology Beijing

Saroj Prasad Dash

Graphene Centre at Chalmers

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

2D Materials

2053-1583 (eISSN)

Vol. 6 3 035042

Subject Categories

Other Physics Topics

Other Electrical Engineering, Electronic Engineering, Information Engineering

Condensed Matter Physics

DOI

10.1088/2053-1583/ab1d83

More information

Latest update

12/2/2021