Stable and tunable charge carrier control of graphene for quantum resistance metrology
Paper in proceeding, 2018
Here we demonstrate a stable and tunable method to alter the carrier concentration of epitaxial graphene grown on silicon carbide. This technique relies on chemical doping by an acceptor molecule. Through careful tuning one can produce chemically doped graphene quantum resistance devices which show long-term stability in ambient conditions and have performance comparable to that of GaAs quantum resistance standards. This development paves the way for controlled device fabrication of graphene quantum hall resistance standards, which can be reliably tailored to operate below 5 T and above 4 K out-of-the-box, without further adjustments from the end-user.
chemical doping
quantum hall effect
measurement standards
graphene
Author
Hans He
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
Samuel Lara Avila
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
Tobias Bergsten
RISE Research Institutes of Sweden
Gunnar Eklund
RISE Research Institutes of Sweden
Kyung Ho Kim
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
Rositza Yakimova
Linköping University
Yung Woo Park
Seoul National University
University of Pennsylvania
Sergey Kubatkin
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
2018 Conference on Precision Electromagnetic Measurements (CPEM 2018)
8501252
978-1-5386-0974-3 (ISBN)
2018 Conference on Precision Electromagnetic Measurements, CPEM 2018
Paris, France,
Paris, France,
Subject Categories
Medical Equipment Engineering
Other Electrical Engineering, Electronic Engineering, Information Engineering
Condensed Matter Physics
DOI
10.1109/CPEM.2018.8501252