Novel group IV nano- and micro-structures for light sources on silicon
Paper i proceeding, 2017

We present our recent researches on novel group IV nano- and micro-structures for potential light sources on Si, including the tensile strained Ge quantum dots (QDs), GeSn thin films and microstructures, and Ge(Sn) nanowires. Tensile-strained Ge QDs were grown by SS-MBE, and photoluminescence was achieved. The GeSn thin films were demonstrated with Sn concentration above the bandgap transition critical point, and partially suspended GeSn microstructures were fabricated for relaxing the compressive strain.

Författare

Y. Li

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

Y. Han

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

Chinese Academy of Sciences

Y. X. Song

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

Z. P. Zhang

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

ShanghaiTech University

Z. S. Zhu

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

ShanghaiTech University

Q. M. Chen

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

Chinese Academy of Sciences

J. J. Liu

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

Chinese Academy of Sciences

Shu Min Wang

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

2017 IEEE Photonics Society Summer Topicals Meeting Series, SUM 2017; San Juan Marriott ResortSan Juan; Puerto Rico; 10 July 2017 through 12 July 2017

43-44

Ämneskategorier

Nanoteknik

DOI

10.1109/PHOSST.2017.8012642

ISBN

978-150906570-7