Suspended GeSn microstructure for light source on Si
Paper i proceeding, 2017

A novel suspended GeSn microstructure is demonstrated by selective etching of GeSn thin film on Ge. XRD and ?-Raman measurements show that the compressive strain in the GeSn thin film is effectively relaxed, and furthermore, unexpected tensile strain was introduced in the suspended GeSn.

Författare

Y. Han

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

Chinese Academy of Sciences

Y. Li

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

Y. X. Song

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

Z. P. Zhang

ShanghaiTech University

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

J. J. Liu

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

Chinese Academy of Sciences

Z. Y. S. Zhu

ShanghaiTech University

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

Shu Min Wang

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

2017 IEEE Photonics Society Summer Topicals Meeting Series, SUM 2017, San Juan, Puerto Rico, 10-12 July 2017

69-70

Ämneskategorier

Elektroteknik och elektronik

DOI

10.1109/PHOSST.2017.8012654

ISBN

978-1-5090-6570-7