A 100-145 GHz Area-Efficient Power Amplifier in a 130 nm SiGe Technology
Paper i proceeding, 2017

A 6-stage, 8-way combining power amplifier (PA) in a 130 nm SiGe BiCMOS technology is designed and measured. This PA has an output power of 12.5 - 15.5 dBm in a frequency range from 100 GHz to 145 GHz, when the input power is about 2 dBm. The small signal gain is 19 dB and the maximum DC power consumption is 480 mW with a supply voltage of 1.87 V. The peak power added efficiency (PAE) is 6.4% in D-band. T-junctions are utilized to combine and divide millimeter-wave power. To reduce the PA's loss and chip area, neither a Wilkinson power combiner/divider nor a balun is applied. The chip size is 0.53 mm(2) (0.26 mm(2) without pads).

Power amplifier




Mingquang Bao

Ericsson AB

Zhongxia Simon He

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Herbert Zirath

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Ericsson AB

European Microwave Conference

2325-0305 (ISSN)


47th European Microwave Conference (EuMC)
Nuremberg, Germany,



Marin teknik

Annan elektroteknik och elektronik

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