Band Structure and Optical Gain of InGaAs/GaAsBi Type-II Quantum Wells Modeled by the k center dot p Model
Artikel i vetenskaplig tidskrift, 2018

Optical gains of type-II InGaAs/GaAsBi quantum wells (QWs) with W, N, and M shapes are analyzed theoretically for near-infrared laser applications. The bandgap and wave functions are calculated using the self-consistent k . p Hamiltonian, taking into account valence band mixing and the strain effect. Our calculations show that the M-shaped type-II QWs are a promising structure for making 1.3 mu m lasers at room temperature because they can easily be used to obtain 1.3 mu m for photoluminescence with a proper thickness and have large wave-function overlap for high optical gain.

Författare

Chang Wang

ShanghaiTech University

Chinese Academy of Sciences

Wenwu Pan

ShanghaiTech University

Chinese Academy of Sciences

Konstantin Kolokolov

Moscow State University

Shu Min Wang

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Chinese Physics Letters

0256-307X (ISSN)

Vol. 35 057801

Ämneskategorier

Atom- och molekylfysik och optik

Annan fysik

Den kondenserade materiens fysik

DOI

10.1088/0256-307X/35/5/057801