A RF-DAC based 40 Gbps PAM Modulator with 1.2 pJ/bit Energy Efficiency at Millimeterwave Band
Paper i proceeding, 2018

A PAM-4 modulator is designed and fabricated in a 0.25μm indium phosphide (InP) double heterojunction bipolar transistor (DHBT) technology. The modulator is verified to have a 3-dB bandwidth of 60-90 GHz and a peak output power of -5 dBm at 75 GHz. This modulator can support 40 Gbps data transmission with a bit error rate of 3.7×10−6, the energy efficiency is better than 1.2 pJ/bit. This modulator is suitable for application such as low power, short range, ultra high data rate wireless communication.

DHBT

wide-band

RF-DAC

InP

pulse amplitude modulation

energy efficiency

internet of things

Författare

Frida Strömbeck

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Zhongxia Simon He

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Herbert Zirath

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

2018 IEEE/MTT-S International Microwave Symposium
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Styrkeområden

Nanovetenskap och nanoteknik

Ämneskategorier

Kommunikationssystem

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Senast uppdaterat

2018-08-16