A RF-DAC based 40 Gbps PAM Modulator with 1.2 pJ/bit Energy Efficiency at Millimeterwave Band
Paper i proceeding, 2018

A PAM-4 modulator is designed and fabricated in a 0.25μm indium phosphide (InP) double heterojunction bipolar transistor (DHBT) technology. The modulator is verified to have a 3-dB bandwidth of 60-90 GHz and a peak output power of -5 dBm at 75 GHz. This modulator can support 40 Gbps data transmission with a bit error rate of 3.7×10−6, the energy efficiency is better than 1.2 pJ/bit. This modulator is suitable for application such as low power, short range, ultra high data rate wireless communication.

DHBT

internet of things

InP

energy efficiency

wide-band

pulse amplitude modulation

RF-DAC

Författare

Frida Strömbeck

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Zhongxia Simon He

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Herbert Zirath

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

IEEE MTT-S International Microwave Symposium Digest

0149645X (ISSN)

Vol. 2018 931-933 8439488

2018 IEEE/MTT-S International Microwave Symposium, IMS 2018
Philadelphia, USA,

Styrkeområden

Nanovetenskap och nanoteknik

Ämneskategorier

Kommunikationssystem

DOI

10.1109/MWSYM.2018.8439488

Mer information

Senast uppdaterat

2019-01-17