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/Author(Krause, S., Desmaris, V., Pavolotsky, A. et al)
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/Subject(We demonstrate the suitability of employing suspended GaN beams on a Pi-shaped Si frame for waveguide-based cryogenic THz components and systems. This concept addresses major challenges and provides eased device handling, cryogenic operation, micron-alignment possibilities, high integratability and allows the electrical contacting by using bonding wires. In particular, a balanced hot electron bolometer \(HEB\) mixer was implemented for frequencies at 1.3 THz with state-of-the-art IF performance, which combines micro-machined all-metal waveguide components in conjunction with a suspended GaN beam. In addition, in order to accomplish a proper design of active or passive components, the accurate knowledge of the effective dielectric constant at THz frequencies is crucial when such membranes are employed. Thus, a direct measurement method based on a resonance structure and an S-parameter measurement between 1 THz and 1.5 THz is also presented.)
/Title(Suspended GaN beams and membranes on Si as a platform for waveguide-based THz applications)
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/Keywords(GaN on Si, waveguide, THz components, HEB, )
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doi:10.1088/1361-6439/aacf5c
Suspended GaN beams and membranes on Si as a platform for waveguide-based THz applications
S Krause
V Desmaris
A Pavolotsky
D Meledin
V Belitsky
IOP Publishing
Journal of Micromechanics and Microengineering, 28 (2018) aacf5c. doi: 10.1088/1361-6439/aacf5c
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Journal of Micromechanics and Microengineering
© 2018 IOP Publishing Ltd
0960-1317
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