2D RF Electronics: from devices to circuits - challenges and applications
Paper i proceeding, 2018

We developed process technologies dedicated to high frequency graphene field-effect transistors (GFETs). We used graphene from different sources (graphene growth directly on silicon carbide (SiC) substrate by chemical vapor deposition (CVD) technique [1], CVD graphene growth on Cu foil and transferred on Si02/Si substrate [2]) to realize two GFET structures (top gate and back gate transistors). After fabrication, we have explored the high frequency performances of GFETs including noise performances. The performances of GFET achieved are comparable to the state of the art with the gate length. The noise parameters of the transistors are mandatory for circuit design (linear application such as amplifier). These parameters limit the performances of the device when small signals are considered. The effort was made here to measure the noise parameters of GFET $(\mathrm{NF}_{\min}, \mathrm{R}_{\mathrm{n}}, \Gamma_{\mathrm{opt}})$ . It is well known that these parameters depend both on intrinsic properties of the graphene material (noise generated in the channel under the gate), as well as extrinsic parameters related to the technological process (mainly noise generated by access resistances, …). Based on the reliability of the process, RF circuits were designed and fabricated. These circuits demonstrated the potential to achieve high performances in the field of linear circuit such as amplifiers, and non-linear circuits such as mixers.

Författare

M Deng

Organisation okänd

E Pallecchi

Organisation okänd

S Fregonese

Organisation okänd

D Fadi

Organisation okänd

W Wei

Organisation okänd

Henri Happy

Organisation okänd

T Zimmer

Organisation okänd

MICHAEL ANDERSSON

Chalmers, Mikroteknologi och nanovetenskap (MC2), Terahertz- och millimetervågsteknik

Jan Stake

Chalmers, Mikroteknologi och nanovetenskap (MC2), Terahertz- och millimetervågsteknik

2018 76th Device Research Conference (DRC)

978-1-5386-3028-0 (eISSN)

76th Device Research Conference (DRC)
Santa Barbara, USA,

Graphene-Based Revolutions in ICT And Beyond (Graphene Flagship)

Europeiska kommissionen (FP7), 2013-10-01 -- 2016-03-31.

Graphene Core1. Graphene-based disruptive technologies (Graphene Flagship)

Europeiska kommissionen (Horisont 2020), 2016-04-01 -- 2018-03-31.

Styrkeområden

Informations- och kommunikationsteknik

Nanovetenskap och nanoteknik

Infrastruktur

Kollberglaboratoriet

Nanotekniklaboratoriet

Ämneskategorier

Annan elektroteknik och elektronik

DOI

10.1109/DRC.2018.8442190

Mer information

Skapat

2018-09-25