Progress on III-V-Bi Alloys and Light Emitting Devices
Paper i proceeding, 2018

In this invited talk, we will present some recent progresses on epitaxial growth of III-V-Bi alloys and light emitting devices. Aluminum containing bismides including AlAsBi and AlSbBi have been epitaxially grown for the first time and their physical properties will be reported. New designs of using delta-doping in quantum wells are investigated to effectively extend light emission wavelength. Finally, GaAs based light emitting diode will be presented.

AlAsBi

light emitting diode

dilute bismide

AlSbBi

molecular beam epitaxy

laser diode

Författare

Shu Min Wang

Chinese Academy of Sciences

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

L. Yue

Chinese Academy of Sciences

L Wang

Chinese Academy of Sciences

Yanchao Zhang

Chinese Academy of Sciences

ShanghaiTech University

Chang Wang

Chinese Academy of Sciences

ShanghaiTech University

Xiaolei Zhang

ShanghaiTech University

Chinese Academy of Sciences

Chaodan Chi

Chinese Academy of Sciences

Hao Liang

Chinese Academy of Sciences

Xiaoyan Wu

Chinese Academy of Sciences

J. J. Liu

Chinese Academy of Sciences

W. W. Pan

Chinese Academy of Sciences

Chunfang Cao

Chinese Academy of Sciences

Y Li

Chinese Academy of Sciences

International Conference on Transparent Optical Networks

2162-7339 (eISSN)

Vol. 2018-July 8473745

20th International Conference on Transparent Optical Networks, ICTON 2018
Bucharest, Romania,

Ämneskategorier

Arkitekturteknik

Annan fysik

Den kondenserade materiens fysik

DOI

10.1109/ICTON.2018.8473745

Mer information

Senast uppdaterat

2019-01-07