Molecular beam epitaxy growth of AlAs1-xBix
Artikel i vetenskaplig tidskrift, 2019

High quality AlAs1-xBix layers with Bi composition of 3%-10.5% have been successfully grown by molecular beam epitaxy. The Bi incorporation is confirmed by Rutherford backscattering spectroscopy. For a 400 nm thick AlAsBi layer, the strain relaxation occurs when the Bi composition is larger than 6.5%. Flux ratio is calculated from Knudsen-cell model and Maxwell equation, according to the geometrical relationship of our equipment. The Bi incorporation increases with increasing the As-Al flux ratio as well as the Bi flux. The extrapolation lattice constant of hypothetic zincblende AlBi alloy is about 6.23 angstrom.

AlAsBi

As-Al flux ratio

molecular beam epitaxy

Rutherford backscattering spectroscopy

Författare

Chang Wang

Chinese Academy of Sciences

ShanghaiTech University

Lijuan Wang

Chinese Academy of Sciences

Xiaoyan Wu

Shanghai Jiao Tong University

Yanchao Zhang

ShanghaiTech University

Chinese Academy of Sciences

Hao Liang

Chinese Academy of Sciences

Li Yue

Chinese Academy of Sciences

Zhenpu Zhang

Chinese Academy of Sciences

ShanghaiTech University

Xin Ou

Chinese Academy of Sciences

Shu Min Wang

Chinese Academy of Sciences

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

ShanghaiTech University

Semiconductor Science and Technology

0268-1242 (ISSN) 1361-6641 (eISSN)

Vol. 34 3 034003

Ämneskategorier

Fysikalisk kemi

Annan materialteknik

Den kondenserade materiens fysik

DOI

10.1088/1361-6641/aacf38

Mer information

Senast uppdaterat

2019-05-13