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10.1063/1.5107493
2019-08-02
On the angular dependence of InP high electron mobility transistors for cryogenic low noise amplifiers in a magnetic field
aip.org
© 2019 Author(s)
10.1063/1.5107493
https://doi.org/10.1063/1.5107493
VoR
doi:10.1063/1.5107493
AIP Advances
application/pdf
AIP Publishing, LLC
On the angular dependence of InP high electron mobility transistors for cryogenic low noise amplifiers in a magnetic field
Isabel Harrysson Rodrigues
David Niepce
Arsalan Pourkabirian
Giuseppe Moschetti
Joel Schleeh
Thilo Bauch
Jan Grahn
AIP Advances 2019.9:085004
2019-08-02
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10.1063/1.5107493
aip.org
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