Cryogenic DC Characterization of InAs/Al80Ga20Sb Self-Switching Diodes
Paper i proceeding, 2013
DC characterization of an InAs/Al80Ga20Sb self-switching diode for THz detection is presented at 300 K and 6 K. Compared to 300 K, an enhancement of the diode I-V nonlinearity and associated responsivity was observed under zero-bias conditions at 6 K. The intrinsic responsivity was estimated to 490 V/W at 300 K and 4400 V/W at 6 K.
diode
self-switching
detector
SSD
THz
InAs
Författare
Andreas Westlund
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Giuseppe Moschetti
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Per-Åke Nilsson
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Jan Grahn
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
L. Desplanque
Université de Lille
X. Wallart
Université de Lille
Conference Proceedings - International Conference on Indium Phosphide and Related Materials
10928669 (ISSN)
978-1-4673-6131-6 (ISBN)
Ämneskategorier
Elektroteknik och elektronik
DOI
10.1109/ICIPRM.2013.6562599
ISBN
978-1-4673-6131-6