Double-Densified VerticallyAligned Carbon Nanotube Bundles for Application in 3D Integration High Aspect Ratio TSV Interconnects
Paper i proceeding, 2016

The treatment of densification by vapor on pristine MWCNT bundles are necessary to improve the effective area of the CNT TSV. However, the CNT bundles might tilt partly because of the non-uniform densification at root of the bundle, especially when it comes to the high aspect ratio CNT bundles. In order to solve these problems, a double densification process has been proposed and developed here. First of all, the shape of partial densified CNT bundles were optimized as a function of time. After several steps such as transferring of partial densified CNT bundles into the via, second densification, epoxy filling and chemical mechanical polishing, the CNT filled TSV with aspect ratio of 10 was achieved. The current voltage response of the CNT TSV interconnection indicated good electrical connection was formed. The resistivity of CNT bundles in via was calculated to be around 2-3 milli-ohmcm.

Författare

Wei Mu

Chalmers, Mikroteknologi och nanovetenskap, Elektronikmaterial

Josef Hansson

Chalmers, Mikroteknologi och nanovetenskap, Elektronikmaterial

Shuangxi Sun

Chalmers, Mikroteknologi och nanovetenskap, Elektronikmaterial

Michael Edwards

Chalmers, Mikroteknologi och nanovetenskap, Elektronikmaterial

Yifeng Fu

Chalmers, Mikroteknologi och nanovetenskap, Elektronikmaterial

Kjell Jeppson

Chalmers, Mikroteknologi och nanovetenskap, Elektronikmaterial

Johan Liu

Chalmers, Mikroteknologi och nanovetenskap, Elektronikmaterial

Proceedings - Electronic Components and Technology Conference

05695503 (ISSN)

211-216
978-1-5090-1204-6 (ISBN)

Styrkeområden

Produktion

Ämneskategorier

Nanoteknik

DOI

10.1109/ECTC.2016.160

ISBN

978-1-5090-1204-6

Mer information

Senast uppdaterat

2024-01-03