Effect of oxygen vacancies in the SrTiO3 substrate on the electrical properties of the LaAlO3/SrTiO3 interface
Artikel i vetenskaplig tidskrift, 2007
We experimentally investigated optical, electrical, and microstructural properties of heterointerfaces between two thin-film perovskite insulating materials, SrTiO3 (STO) and LaAlO3 (LAO), deposited at different oxygen pressure conditions. Cathode and photoluminescence experiments show that oxygen vacancies are formed in the bulk STO substrate during the growth of LAO films, resulting in high electrical conductivity and mobility values. In both high and low oxygen pressure interfaces, the electrical Hall mobilities follow a similar power-law dependence as observed in oxygen reduced STO bulk samples. The results are confirmed on a microscopic level by local strain fields at the interface reaching 10 nm into the STO substrate.
substrates
lanthanum compounds
strontium compounds
photoluminescence
Hall mobility
crystal microstructure
interface structure
cathodoluminescence
insulating thin films
vacancies (crystal)
electrical conductivity
Författare
Alexei Kalaboukhov
Chalmers, Mikroteknologi och nanovetenskap, Kvantkomponentfysik
Robert Gunnarsson
Chalmers, Mikroteknologi och nanovetenskap
Johan Börjesson
Chalmers, Teknisk fysik, Mikroskopi och mikroanalys
Eva Olsson
Chalmers, Teknisk fysik, Mikroskopi och mikroanalys
Dag Winkler
Chalmers, Mikroteknologi och nanovetenskap, Kvantkomponentfysik
Tord Claeson
Chalmers, Mikroteknologi och nanovetenskap, Kvantkomponentfysik
Physical Review B - Condensed Matter and Materials Physics
24699950 (ISSN) 24699969 (eISSN)
Vol. 75 12 121404R-Ämneskategorier
Den kondenserade materiens fysik