Scaling of InGaAs/InAlAs and InAs/AlSb HEMTs for microwave/mm-wave applications
Licentiatavhandling, 2007
metamorphic
InGaAs
gate length
pseudomorphic
InAs
AlSb
InP
Schottky layer
High electron mobility transistor (HEMT)
drain bias
Författare
Malin Borg
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Effect of Schottky layer thickness on DC, RF and noise of 70-nm gate length InP HEMTs
18th International Conference on Indium Phosphide and Related Materials, pp. 386-388,; (2006)p. 329-331
Paper i proceeding
Vertical scaling of gate-to-channel distance for a 70 nm InP pseudomorphic HEMT technology
Proceed. of Conf on InP and Related Materials (IPRM'05),; (2005)p. 204-207
Paper i proceeding
Ämneskategorier
Annan elektroteknik och elektronik
Technical report MC2 - Department of Microtechnology and Nanoscience, Chalmers University of Technology
Kollektorn, Kemivägen 9, Chalmers University of Technology
Opponent: Per Lundgren, Docent, BioNano Systems Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology