Graphene related materials for thermal management
Artikel i vetenskaplig tidskrift, 2020
Almost 15 years have gone ever since the discovery of graphene as a single atom layer. Numerous papers have been published to demonstrate its high electron mobility, excellent thermal and mechanical as well as optical properties. We have recently seen more and more applications towards using graphene in commercial products. This paper is an attempt to review and summarize the current status of the research of the thermal properties of graphene and other 2D based materials including the manufacturing and characterization techniques and their applications, especially in electronics and power modules. It is obvious from the review that graphene has penetrated the market and gets more and more applications in commercial electronics thermal management context. In the paper, we also made a critical analysis of how mature the manufacturing processes are; what are the accuracies and challenges with the various characterization techniques and what are the remaining questions and issues left before we see further more applications in this exciting and fascinating field.
thermal characterization
material fabrication
thermal management
2D materials
graphene
Författare
Yifeng Fu
Chalmers, Mikroteknologi och nanovetenskap, Elektronikmaterial
Josef Hansson
Chalmers, Mikroteknologi och nanovetenskap, Elektronikmaterial
Ya Liu
Chalmers, Mikroteknologi och nanovetenskap, Elektronikmaterial
Fudan University
Shujing Chen
Shanghai University
Abdelhafid Zehri
Chalmers, Mikroteknologi och nanovetenskap, Elektronikmaterial
Majid Kabiri Samani
Chalmers, Mikroteknologi och nanovetenskap, Elektronikmaterial
Nan Wang
SHT Smart High-Tech
Yuxiang Ni
Southwest Jiaotong University
Yan Zhang
Shanghai University
Zhi-Bin Zhang
Uppsala universitet
Qianlong Wang
Shenzhen Shen Rui Graphene Co Ltd
Mengxiong Li
Fudan University
Hongbin Lu
Fudan University
Marianna Sledzinska
Barcelona Institute of Science and Technology (BIST)
Clivia M. Sotomayor Torres
Barcelona Institute of Science and Technology (BIST)
Institucio Catalana de Recerca i Estudis Avancats
Sebastian Volz
University of Tokyo
Alexander A. Balandin
University of California at Riverside
Xiangfan Xu
Tongji University
Johan Liu
Chalmers, Mikroteknologi och nanovetenskap, Elektronikmaterial
Shanghai University
2D Materials
2053-1583 (eISSN)
Vol. 7 1 012001Kolbaserat höghastighet 3D GaN elektroniksystem
Stiftelsen för Strategisk forskning (SSF) (SE13-0061), 2014-03-01 -- 2019-06-30.
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DOI
10.1088/2053-1583/ab48d9