56% PAE mm-Wave SiGe BiCMOS Power Amplifier Employing Local Backside Etching
Artikel i vetenskaplig tidskrift, 2024

This letter presents a power amplifier (PA) with excellent power-added efficiency (PAE) for millimeter-wave (mm-wave) applications. The high efficiency is achieved by leveraging a local backside etching (LBE) process to enhance the quality factor ( Q ) of the output matching network. The PA was fabricated in a mature SiGe BiCMOS technology featuring heterojunction bipolar transistors (HBTs) having an fT / fmax of 250/340 GHz. While the measured peak PAE is 56% at 24 and 25 GHz, the PA provides 16 dB of peak gain and a 3-dB bandwidth of 19 GHz ranging from 13.5 to 32.5 GHz, which makes the circuit well suited for multiple purposes, such as sensors, radars, 5G, and satellite communications. The maximum PAE exceeds 40% from 22 to 28 GHz, with a peak saturated power ( Psat ) of 16.5 dBm at 25 GHz. To the best of authors’ knowledge, this PA achieves the highest PAE reported to date for silicon-based mm-wave amplifiers.

5G

efficiency

Satcom

power amplifiers (PA)

power-added efficiency (PAE)

Författare

Aniello Franzese

IHP-Leibniz Institute for High Performance Microelectronics

Batuhan Sutbas

IHP-Leibniz Institute for High Performance Microelectronics

Raqibul Hasan

IHP-Leibniz Institute for High Performance Microelectronics

Andrea Malignaggi

IHP-Leibniz Institute for High Performance Microelectronics

Thomas Mausolf

IHP-Leibniz Institute for High Performance Microelectronics

Nebojsa Maletic

IHP-Leibniz Institute for High Performance Microelectronics

Muh-Dey Wei

RWTH Aachen University

Han Zhou

Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik

Christian Fager

Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik

Corrado Carta

IHP-Leibniz Institute for High Performance Microelectronics

Renato Negra

RWTH Aachen University

IEEE Microwave and Wireless Technology Letters

2771957X (ISSN) 27719588 (eISSN)

Vol. 34 8 1023-1026

Ämneskategorier

Telekommunikation

Annan elektroteknik och elektronik

DOI

10.1109/LMWT.2024.3409149

Mer information

Senast uppdaterat

2024-08-24