Design and Characterization of H-Band (220-325 GHz) Amplifiers in a 250-nm InP DHBT Technology
Artikel i vetenskaplig tidskrift, 2014
Design and characterization of InP DHBT amplifiers in common-emitter and common-base topologies are presented. Both one-stage and multistage circuits are demonstrated. For one of the amplifiers, a peak gain of 24 dB at 255 GHz is measured, which is among the highest reported gains for HBT amplifiers above 200 GHz, and more than 10 dB gain at 210-315 GHz. The noise figure of this amplifier is measured on-wafer at 240-295 GHz, and it demonstrates a minimum noise figure of 10.4 dB at 265 GHz, which is the lowest reported noise figure for HBT amplifiers above 200 GHz.
millimeter-wave amplifier
LOW-NOISE AMPLIFIER
RECEIVER
Double heterojunction bipolar transistor (DHBT)
indium phosphide (InP)
SUBMILLIMETER-WAVE
monolithic microwave integrated circuit (MMIC)
H-band
Författare
Klas Eriksson
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Sten Gunnarsson
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Vessen Vassilev
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Herbert Zirath
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
IEEE Transactions on Terahertz Science and Technology
2156-342X (ISSN) 21563446 (eISSN)
Vol. 4 1 56-64 6583229Ämneskategorier
Fysik
DOI
10.1109/tthz.2013.2275900