DC and RF cryogenic behaviour of InAs/AlSb HEMTs

Paper i proceeding, 2010

DC and RF properties are reported for InAs/AlSb HEMTs operating under cryogenic conditions (6 K) for a drain source bias up to 0.3 V. Compared to room temperature (300 K), a large improvement in device properties was observed: lower R on , lower g ds , a more distinct knee in the I ds (V ds ) characteristics, increased f T and a reduction of the gate leakage current of more than two orders of magnitude. This makes InAs/AlSb HEMT technology of large interest in cryogenic low-noise amplifier designs with high constraints on power dissipation.