Inverse dispersion engineering in silicon waveguides
Artikel i vetenskaplig tidskrift, 2014

We present a numerical tool that searches an optimal cross section geometry of silicon-on-insulator waveguides given a target dispersion profile. The approach is a gradient-based multidimensional method whose efficiency resides on the simultaneous calculation of the propagation constant derivatives with respect to all geometrical parameters of the structure by using the waveguide mode distribution. The algorithm is compatible with regular mode solvers. As an illustrative example, using a silicon slot hybrid waveguide with 4 independent degrees of freedom, our approach finds ultra-flattened (either normal or anomalous) dispersion over 350 nm bandwidth in less than 10 iterations.

Författare

David Castello-Lurbe

Universitat de Valencia

Victor Torres Company

Chalmers, Mikroteknologi och nanovetenskap, Fotonik

Enrique Silvestre

Universitat de Valencia

Journal of the Optical Society of America B: Optical Physics

0740-3224 (ISSN) 15208540 (eISSN)

Vol. 31 8 1829-1835

Styrkeområden

Informations- och kommunikationsteknik

Nanovetenskap och nanoteknik

Ämneskategorier

Telekommunikation

Atom- och molekylfysik och optik

Nanoteknik

DOI

10.1364/JOSAB.31.001829

Mer information

Senast uppdaterat

2018-03-06