Thermal properties of charge noise sources

Artikel i vetenskaplig tidskrift, 2013

Measurements of the temperature and bias dependence of single-electron transistors (SETs) in a dilution refrigerator show that charge noise increases linearly with refrigerator temperature above a voltage-dependent threshold temperature, and that its low-temperature saturation is due to SET self-heating. We show further that the two-level fluctuators responsible for charge noise are in strong thermal contact with the electrons in the SET, which can be at a much higher temperature than the substrate. We suggest that the noise is caused by electrons tunneling between the SET metal and nearby potential wells.