Characterization of thin film resistors and capacitors integrated on GaAs membranes for submillimeter wave circuit applications
Paper i proceeding, 2011

In this paper we describe the fabrication and characterization of thin film resistors and capacitors integrated on a 3 μm thick GaAs membrane. The thin film resistors and capacitors are based on NiCr and SiN x materials respectively. Onwafer probing DC characterization of these thin film components was performed before removing the GaAs substrate. The corresponding high frequency characterization in the WR-03 frequency band (220-325 GHz) was demonstrated utilizing a membrane-based two-port TRL calibration technique. The measurement results have shown a good agreement with the simulation.

S parameter

thin film capacitor

membrane

thin film resistor

Författare

Huan Zhao Ternehäll

Gigahertzcentrum

Chalmers, Mikroteknologi och nanovetenskap, Terahertz- och millimetervågsteknik

Thi Ngoc Do Thanh

Chalmers, Mikroteknologi och nanovetenskap, Terahertz- och millimetervågsteknik

Peter Sobis

Chalmers, Mikroteknologi och nanovetenskap, Terahertz- och millimetervågsteknik

Gigahertzcentrum

Aik-Yean Tang

Gigahertzcentrum

Chalmers, Mikroteknologi och nanovetenskap, Terahertz- och millimetervågsteknik

Klas Yhland

Gigahertzcentrum

Jörgen Stenarson

Gigahertzcentrum

Jan Stake

Gigahertzcentrum

Chalmers, Mikroteknologi och nanovetenskap, Terahertz- och millimetervågsteknik

Conference Proceedings - International Conference on Indium Phosphide and Related Materials. 2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011, Berlin, 22-26 May 2011

1092-8669 (ISSN)

1-4
978-145771753-6 (ISBN)

Styrkeområden

Informations- och kommunikationsteknik

Nanovetenskap och nanoteknik (SO 2010-2017, EI 2018-)

Ämneskategorier

Elektroteknik och elektronik

Infrastruktur

Nanotekniklaboratoriet

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Senast uppdaterat

2022-02-01