Improved Diode Geometry for Planar Heterostructure Barrier Varactors
Paper i proceeding, 1999
We report state-of-the-art performance of tripler efficiency and output power for a new design of AlGaAs-based heterostructure barrier varactor diodes. The new diodes were designed for reduced thermal resistance and series resistance. An efficiency of 4.8% and a maximum output power of 4 mW was achieved at an output frequency of 246 GHz.
HBV
frequency multiplier
Författare
Jan Stake
Institutionen för mikroelektronik
Chris M. Mann
Lars Dillner
Institutionen för mikroelektronik
Stephen H. Jones
Stein Hollung
Institutionen för mikroelektronik
Mattias Ingvarson
Institutionen för mikroelektronik
Henini Mohamed
Byron Alderman
Erik Kollberg
Institutionen för mikroelektronik
Tenth International Symposium on Space Terahertz Technology
485-491
Ämneskategorier
Annan elektroteknik och elektronik