Kai-Hsin Wen

Doctoral Student at Microwave Electronics

Source: chalmers.se
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Showing 2 publications

2022

Impact of in situ NH3 pre-treatment of LPCVD SiN passivation on GaN HEMT performance

Chen Ding Yuan, Axel R. Persson, Kai-Hsin Wen et al
Semiconductor Science and Technology. Vol. 37 (3)
Journal article
2021

Thin Al0.5Ga0.5N/GaN HEMTs on QuanFINE® Structure

Chen Ding Yuan, Kai-Hsin Wen, Mattias Thorsell et al
CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers, p. 153-155
Paper in proceeding

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