Showing 6 publications
GaAs based 1.3 µm quantum well lasers grown by molecular beam epitaxy
Metamorphic InGaAs quanum wells for light emission at 1.3 – 1.6 µm
State-of-the-art GaInNAs quantum wells and 1.3 µm lasers grown by molecular beam epitaxy
6. Direct Comparison of Threshold and Gain Characteristics of 1300 nm GaInNAs lasers with GaNAs and GaAs Barriers
12. Long-Wavelength InGaAs/GaAs Quantum-Well Lasers Grown by Molecular Beam Epitaxy
Direct Comparison of Threshold and Gain Characteristics of 1300 nm GaInNAs lasers with GaNAs and GaAs Barriers
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