An Image Reject Mixer for High-Speed E-band (71-76, 81-86 GHz) Wireless Communication
Paper in proceedings, 2009

In this paper, the design and characterization of a broadband image reject mixer for the next generation of point-to-point microwave links is presented. The manufacturing has been made in a commercially available 0.15 μm gate length GaAs mHEMT technology. The measured performance demonstrates a conversion loss of 9 dB and an image rejection ratio of 25 dB on average across the full E-band (71-76 and 81-86 GHz). Performance peaks at 77 GHz with conversion loss of 7 dB and image rejection of 40 dB. Furthermore, these results have been achieved with a LO power requirement of 4 dBm. To the best of the authors' knowledge this is the first reported image reject mixer suitable for the full E-band. ©2009 IEEE.

image reject mixer

GaAs

E-band

MMIC

single sideband

mHEMT

Author

Marcus Gavell

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Mattias Ferndahl

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Sten Gunnarsson

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Morteza Abbasi

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Herbert Zirath

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Compound Semiconductor Integrated Circuit Symposium, Oct. 2009, Greensboro, NC

1550-8781 (ISSN)

1-4

Subject Categories

Other Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1109/csics.2009.5315655

ISBN

978-1-4244-5191-3

More information

Created

10/7/2017