Comparison of SiC and Si Power Semiconductor Devices to Be Used in 2.5 kW DC/DC Converter
Paper in proceeding, 2009
With the fast development of silicon carbide (SiC)
technology, SiC-based power semiconductor devices have started to complete Si components in transportation applications. In this paper, two dc/dc converters for hybrid electric vehicles (HEVs) application are designed and analyzed. The losses, efficiency, junction temperature, and the volume and weight of heat sinks of two converters are calculated for a Si and SiC solution for a 2.5kW dc/dc converter. A performance comparison of the parameters
mentioned above gives that SiC-based technology shows
better performances than Si-based power semiconductor devices in the investigated dc/dc converter system. Finally, an economical evaluation shows that the SiC components can cost almost 2.5 times more in order to have the same total cost as for a Si solution for a 15 years operation.
Author
Ghasem Hosseini Aghdam
Chalmers, Energy and Environment
Torbjörn Thiringer
Chalmers, Energy and Environment, Electric Power Engineering
2009 International Conference on Power Electronics and Drive Systems, PEDS 2009; Taipei; Taiwan; 2 January 2009 through 5 January 2009
1035-1040 5385745
978-142444166-2 (ISBN)
Subject Categories
Electrical Engineering, Electronic Engineering, Information Engineering
Other Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1109/PEDS.2009.5385745
ISBN
978-142444166-2