Micromachining of Silicon for Thermal and Position-Sensitive Nuclear-Detector Applications
Journal article, 1989

As part of a programme aiming at the development of small nuclear radiation detectors, for example thermal detectors and position sensitive mosaic structures of surface barrier type, a technique for micromachining the detector bodies in silicon has been developed. The technique is based on an anisotropic etching property of a solution, mainly consisting of KOH. The etch rate is strongly orientation dependent with a speed in the 〈100〉 direction about 400 times faster than in the 〈111〉 direction. The major steps in the etching procedure are described and some examples of deep etching in Si are shown.


Y. Backlund

N. J. Coron

Per Delsing

Department of Physics

Björn Jonson

Department of Physics

Mats Lindroos

Department of Physics

Göran Hugo Nyman

Department of Physics

H. Ravn

K. Riisager

H. H. Stroke

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

0168-9002 (ISSN)

Vol. 279 3 555-559

Subject Categories

Subatomic Physics



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