Magnetoresistance of La0.67Sr0.33MnO3 epitaxial films grown on a substrate with low lattice mismatch
Journal article, 2005

The structure, electrical resistivity, and magnetoresistance of La0.67Sr0.33MnO3 heteroepitaxial films (120-nm thick) practically unstrained by lattice mismatch with the substrate were studied. A strong maximum of negative magnetoresistance of approximate to 27% (for mu(0)H = 4 T) was observed at T approximate to 360 K. While the magnetoresistance decreased monotonically in magnitude with decreasing temperature, it was still in excess of 2% at 150 K. For T < 250 K, the temperature dependence of the electrical resistivity rho of La0.67Sr0.33MnO3 films is fitted well by the relation rho = rho(0) + rho(1)(H)T (2.3), where rho(0) = 1.1 x 10(-4) Omega cm, rho(1)(H = 0) = 1.8 x 10(-9) Omega cm/K-2.3, and rho(1)(mu(0)H = 4 T)/rho(1)(H = 0) approximate to 0.96. The temperature dependence of a parameter gamma characterizing the extent to which the electrical resistivity of the ferromagnetic phase of La0.67Sr0.33MnO3 films is suppressed by a magnetic field (mu(0)H = 5 T) was determined. (c) 2005 Pleiades Publishing, Inc.



la0.67ca0.33mno3 films






Y. A. Boikov

Tord Claeson

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

V. A. Danilov

Physics of the Solid State

1063-7834 (ISSN) 1090-6460 (eISSN)

Vol. 47 12 2281-2286

Subject Categories

Condensed Matter Physics

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