A novel high purity, highly efficient, broadband MMIC frequency multiplier implemented in metamorphic HEMT technology
Conference contribution, 2005

A balanced MMIC doubler implemented in a metamorphic HEMT technology is described. The multiplier is design for C-band (3/6 GHz), and it is based on 2x50 μm mHEMT transistors with common sources connected to ground through a parallel RC circuit. No external gate bias voltage supplies are needed due to the self bias effect of the RC circuit. The balanced doubler gives an output power of 8dBm @ 6 GHz with a power consumption of only 40mW. The 3dB bandwidth is 40 %. The fundamental frequency is suppressed more than 30 dB and the third and fourth harmonic is suppressed more than 20 dB in the desired BW. The agreement between measurements and simulations is good.

Author

Andreas Ådahl

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Herbert Zirath

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Proc. of GigaHertz 2005

Subject Categories

Other Electrical Engineering, Electronic Engineering, Information Engineering

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Created

10/7/2017