Electrical properties of LaLuO3/Si(100) structures prepared by molecular beam deposition
Paper in proceedings, 2010

The paper presents the results of electrical characterization in the wide temperature range (120-320 K) of the interface and bulk properties of high-k LaLuO3 dielectric deposited by molecular beam deposition (MBD) on silicon substrate. The energy distribution of interface state density is presented and typical maxima of 1.2×1011 and 2.5×10 11 eV-1 cm-2 were found at about 0.25-0.3 eV from the silicon valence band. The charge carrier transport through the dielectric at the forward bias was found to occur via Poole-Frenkel mechanism, while variable range hopping conduction (Mott's law) controls the current at the reverse bias.

Author

Y. Y Gomeniuk

Institute of Semiconductors Physics, National Academy of Sciences in Ukraine

Y. V. Gomieniuk

Institute of Semiconductors Physics, National Academy of Sciences in Ukraine

A. N. Nazarov

Institute of Semiconductors Physics, National Academy of Sciences in Ukraine

Bahman Raeissi

Tyndall National Institute at National University of Ireland, Cork

K. Cherkaoui

Tyndall National Institute at National University of Ireland, Cork

S Monaghan

Tyndall National Institute at National University of Ireland, Cork

H. D. B. Gottlob

Gesellschaft fur Angewandte Mikro- und Optoelektronik mbH

M. Schmidt

Gesellschaft fur Angewandte Mikro- und Optoelektronik mbH

J. Schubert

Forschungszentrum Jülich

J.M.J Lopes

Forschungszentrum Jülich

Olof Engström

Chalmers, Applied Physics, Physical Electronics

ECS Transactions

1938-5862 (ISSN) 1938-6737 (eISSN)

Vol. 33 3 221-227

Areas of Advance

Information and Communication Technology

Nanoscience and Nanotechnology (2010-2017)

Subject Categories

Other Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1149/1.3481609

ISBN

978-156677822-0

More information

Latest update

3/6/2018 8