Electrical properties of LaLuO3/Si(100) structures prepared by molecular beam deposition
Paper in proceeding, 2010
Author
Y. Y Gomeniuk
National Academy of Sciences in Ukraine
Y. V. Gomieniuk
National Academy of Sciences in Ukraine
A. N. Nazarov
National Academy of Sciences in Ukraine
Bahman Raeissi
Tyndall National Institute at National University of Ireland, Cork
K. Cherkaoui
Tyndall National Institute at National University of Ireland, Cork
S Monaghan
Tyndall National Institute at National University of Ireland, Cork
H. D. B. Gottlob
Gesellschaft fur Angewandte Mikro- und Optoelektronik mbH
M. Schmidt
Gesellschaft fur Angewandte Mikro- und Optoelektronik mbH
J. Schubert
Forschungszentrum Jülich
J.M.J Lopes
Forschungszentrum Jülich
Olof Engström
Chalmers, Applied Physics, Physical Electronics
ECS Transactions
19385862 (ISSN) 19386737 (eISSN)
Vol. 33 3 221-227978-156677822-0 (ISBN)
Areas of Advance
Information and Communication Technology
Nanoscience and Nanotechnology
Subject Categories
Other Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1149/1.3481609
ISBN
978-156677822-0