Contactless Electroreflectance, Photoluminescence and Time-Resolved Photoluminescence of GaInNAs Quantum Wells Obtained by the MBE Method with N-irradiation
Journal article, 2011

The optical properties of GaInNAs quantum wells (QW) grown by molecular beam epitaxy with and without N-irradiation (i.e. grown by the classical method) were investigated by the contactless electroreflectance (CER), temperature-dependent photoluminescence (PL) and time-resolved PL (TRPL). From CER measurements it was concluded that one type of nitrogen nearest-neighbor environment (In-rich environment) is dominant for GaInNAs QWs grown with N-irradiation whereas various nitrogen environments are present for the reference GaInNAs QW (i.e. the sample obtained by the classical method). PL and TRPL measurements clearly show that the optical properties of GaInNAs QWs are affected mainly by the amount of the incorporated nitride atoms. It was observed that the PL decay time decreased from ∼200 to ∼40 ps when the nitrogen concentration is increased from 0.8 to 2.2%. In addition, the presence of As flux during N-irradiation reduces the amount of the incorporated nitrogen and simultaneously improves the optical quality of GaInNAs QWs (i.e. it weakens the carrier localization at low temperatures and improves the quantum efficiency of PL).

Author

M Baranowski

Wrocław University of Science and Technology

R Kudrawiec

Wrocław University of Science and Technology

M Syperek

Wrocław University of Science and Technology

J Misiewicz

Wrocław University of Science and Technology

Huan Zhao Ternehäll

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Mahdad Sadeghi

Chalmers, Microtechnology and Nanoscience (MC2), Nanofabrication Laboratory

Shu Min Wang

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Semiconductor Science and Technology

0268-1242 (ISSN) 1361-6641 (eISSN)

Vol. 26 4 045012-

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering

Areas of Advance

Materials Science

DOI

10.1088/0268-1242/26/4/045012

More information

Latest update

6/24/2019