On the nature of the interfacial layer in ultra-thin TiN/LaluO3 gate stacks
Journal article, 2012

We present a detailed investigation on the nature of the interfacial layer (IL) in ultra-thin TiN/LaLuO3 (LLO) gate stacks, which is of importance to facilitate CMOS scaling. The molecular beam deposited LaLuO3 films are found to be amorphous by high-resolution transmission electron microscopy. A similar to 9 angstrom thick LaLuO3/interlayer transition observed by medium energy ion scattering correlates with the presence of a dual silicate/SiO2-like interfacial layer derived from the analysis of photoelectron line positions and electron energy loss spectra. A theoretical model is used for the dielectric transition in a bi-layer LaLuO3/IL structure, linking physical and electrical characterization data. The obtained leakage current of 10(-3) A/cm(2) at 1.5 V and equivalent oxide thickness of 0.75 nm for TiN/LaLuO3 gate stacks are adequate for scaling in the 14-12 nm node.

OXIDES

FILMS

DEPOSITION

MOSFETS

DIELECTRICS

INTEGRATION

Author

I. Z. Mitrovic

University of Liverpool

S. Hall

University of Liverpool

N. Sedghi

University of Liverpool

G. Simutis

University of Liverpool

V. R. Dhanak

University of Liverpool

P. Bailey

Daresbury Laboratory

T. Q. C. Noakes

Daresbury Laboratory

I. Alexandrou

FEI Company

Olof Engström

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

J. M. J. Lopes

Forschungszentrum Jülich

Paul Drude Institut fur Festkorperelektronik

J. Schubert

Forschungszentrum Jülich

Journal of Applied Physics

0021-8979 (ISSN) 1089-7550 (eISSN)

Vol. 112 4 044102- 044102

Areas of Advance

Information and Communication Technology

Nanoscience and Nanotechnology (2010-2017)

Subject Categories

Materials Engineering

Nano Technology

DOI

10.1063/1.4746790

More information

Latest update

3/6/2018 8