On the nature of the interfacial layer in ultra-thin TiN/LaluO3 gate stacks
Journal article, 2012
We present a detailed investigation on the nature of the interfacial layer (IL) in ultra-thin TiN/LaLuO3 (LLO) gate stacks, which is of importance to facilitate CMOS scaling. The molecular beam deposited LaLuO3 films are found to be amorphous by high-resolution transmission electron microscopy. A similar to 9 angstrom thick LaLuO3/interlayer transition observed by medium energy ion scattering correlates with the presence of a dual silicate/SiO2-like interfacial layer derived from the analysis of photoelectron line positions and electron energy loss spectra. A theoretical model is used for the dielectric transition in a bi-layer LaLuO3/IL structure, linking physical and electrical characterization data. The obtained leakage current of 10(-3) A/cm(2) at 1.5 V and equivalent oxide thickness of 0.75 nm for TiN/LaLuO3 gate stacks are adequate for scaling in the 14-12 nm node.
OXIDES
FILMS
DEPOSITION
MOSFETS
DIELECTRICS
INTEGRATION
Author
I. Z. Mitrovic
University of Liverpool
S. Hall
University of Liverpool
N. Sedghi
University of Liverpool
G. Simutis
University of Liverpool
V. R. Dhanak
University of Liverpool
P. Bailey
Daresbury Laboratory
T. Q. C. Noakes
Daresbury Laboratory
I. Alexandrou
FEI Company
Olof Engström
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
J. M. J. Lopes
Forschungszentrum Jülich
Paul Drude Institut fur Festkorperelektronik
J. Schubert
Forschungszentrum Jülich
Journal of Applied Physics
0021-8979 (ISSN) 1089-7550 (eISSN)
Vol. 112 4 044102- 044102Areas of Advance
Information and Communication Technology
Nanoscience and Nanotechnology
Subject Categories
Materials Engineering
Nano Technology
DOI
10.1063/1.4746790