Potential barrier at the ferroelectric grain boundary due to asymmetric screening of depolarization fields
Paper in proceeding, 2012
Electric depolarization fields generated by a stripe domain structure in ferroelectrics are considered within a semiconductor model. Field screening due to electronic band bending and due to presence of intrinsic defects leads to the building of asymmetric space charge regions near the grain boundary. This in turn results in the formation of a potential barrier between the grain surface and its interior.
Author
Y.A. Genenko
Institut für Materialwissenschaft
O. Hirsch
Institut für Materialwissenschaft
Paul Erhart
Chalmers, Applied Physics, Materials and Surface Theory
Proceedings of 2012 21st IEEE Int. Symp. on Applications of Ferroelectrics held jointly with 11th IEEE European Conference on the Applications of Polar Dielectrics and IEEE PFM, ISAF/ECAPD/PFM 2012, Aveiro;9 July 2012 through 13 July 2012
1099-4734 (ISSN)
Article number 6297727 1-4978-146732668-1 (ISBN)
Subject Categories
Physical Sciences
Condensed Matter Physics
Areas of Advance
Materials Science
DOI
10.1109/ISAF.2012.6297727
ISBN
978-146732668-1