Surface potential variations in epitaxial graphene devices investigated by Electrostatic Force Spectroscopy
Paper in proceedings, 2012

Electrostatic Force Spectroscopy and Scanning Kelvin Probe Microscopy techniques are used to study the performance of side-gated Hall devices made of epitaxial graphene on 4H-SiC(0001). Electrostatic Force Spectroscopy is a novel method which allows quantitative surface potential measurements with high spatial resolution. Using these techniques, we calibrate work function of the metal coated tip and define the work functions for single and double-layer graphene. We also show that the use of moderate strength electrical fields in the side-gate geometry does not notably change the performance of the device.


V. Panchal

National Physical Laboratory (NPL)

Royal Holloway University of London

T. L. Burnett

National Physical Laboratory (NPL)

University of Manchester

R. Pearce

National Physical Laboratory (NPL)

Karin Cedergren

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

R. Yakimova

Linköping University

A.Y. Tzalenchuk

National Physical Laboratory (NPL)

O. Kazakova

National Physical Laboratory (NPL)

Proceedings of the IEEE Conference on Nanotechnology: 2012 12th IEEE International Conference on Nanotechnology, NANO 2012;Birmingham;20 August 2012through23 August 2012

1944-9380 (eISSN)

978-146732198-3 (ISBN)

Subject Categories

Physical Sciences





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