Surface potential variations in epitaxial graphene devices investigated by Electrostatic Force Spectroscopy
Paper in proceeding, 2012
Electrostatic Force Spectroscopy and Scanning Kelvin Probe Microscopy techniques are used to study the performance of side-gated Hall devices made of epitaxial graphene on 4H-SiC(0001). Electrostatic Force Spectroscopy is a novel method which allows quantitative surface potential measurements with high spatial resolution. Using these techniques, we calibrate work function of the metal coated tip and define the work functions for single and double-layer graphene. We also show that the use of moderate strength electrical fields in the side-gate geometry does not notably change the performance of the device.
Author
V. Panchal
National Physical Laboratory (NPL)
Royal Holloway University of London
T. L. Burnett
National Physical Laboratory (NPL)
University of Manchester
R. Pearce
National Physical Laboratory (NPL)
Karin Cedergren
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
R. Yakimova
Linköping University
A.Y. Tzalenchuk
National Physical Laboratory (NPL)
O. Kazakova
National Physical Laboratory (NPL)
Proceedings of the IEEE Conference on Nanotechnology
19449399 (ISSN) 19449380 (eISSN)
978-146732198-3 (ISBN)
Subject Categories
Physical Sciences
DOI
10.1109/NANO.2012.6322049
ISBN
978-146732198-3