Optical response of Si/Ge superlattices with embedded Ge dots
Paper in proceeding, 2012

A method was provided for treating the optical response of Si/Ge superlattices (SL) with embedded Ge dots. Spectroscopic ellipsometry (SE) measurement at room temperature was used to investigate optical and electronic properties of Si/Ge SL which were grown on silicon (Si) wafers having <;111>; crystallographic orientation. The results of the SE analysis between 1.2 eV and 5.2 eV indicate that the SL system can effectively be described using interdiffusion/intermixing model by assuming a multicrystalline Si and Si1-xGex intermixing layers. The optical transitions exhibit Si, Ge and alloying related critical points.


S. Kalem

National Research Institute of Electronics and Cryptology

Örjan Arthursson

Chalmers, Microtechnology and Nanoscience (MC2), Nanofabrication Laboratory

P. Werner

Max Planck Society

2012 Photonics Global Conference, PGC 2012,Singapore,13-16 December 2012

Article number 6458128 1-4
978-146732516-5 (ISBN)

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