140-220 GHz Imaging Front-end Based on 250 nm InP/InGaAs/InP DHBT Process
Paper in proceeding, 2013
This paper presents a pre-amplified detector receiver based on a 250 nm InP/InGaAs/InP double heterojunction bipolar transistor (DHBT) process available from the Teledyne scientific. The front end consists of a double slot antenna followed by a five stage low noise amplifier and a detector, all integrated onto the same circuit. Results of measured responsivity and noise are presented. The receiver is characterized through measuring its response to hot (293) and cold (78) K terminations. Measurements of the voltage noise spectrum at the video output of the receiver are presented and can be used to derive the temperature resolution of the receiver for a specific video bandwidth.
Power detectors
InP
DHBT
remote sensing
G-band
receivers
passive imaging
MMIC
responsivity
flicker noise
radiometers
NEP
Author
Vessen Vassilev
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Herbert Zirath
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Vedran Furtula
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Yogesh Karandikar
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Klas Eriksson
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Proceedings of SPIE - The International Society for Optical Engineering
0277786X (ISSN) 1996756X (eISSN)
Vol. 8715 871502978-0-8194-9506-8 (ISBN)
Subject Categories (SSIF 2011)
Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1117/12.2018397
ISBN
978-0-8194-9506-8