140-220 GHz Imaging Front-end Based on 250 nm InP/InGaAs/InP DHBT Process
Paper in proceedings, 2013

This paper presents a pre-amplified detector receiver based on a 250 nm InP/InGaAs/InP double heterojunction bipolar transistor (DHBT) process available from the Teledyne scientific. The front end consists of a double slot antenna followed by a five stage low noise amplifier and a detector, all integrated onto the same circuit. Results of measured responsivity and noise are presented. The receiver is characterized through measuring its response to hot (293) and cold (78) K terminations. Measurements of the voltage noise spectrum at the video output of the receiver are presented and can be used to derive the temperature resolution of the receiver for a specific video bandwidth.

Power detectors

InP

NEP

G-band

radiometers

receivers

responsivity

flicker noise

remote sensing

DHBT

MMIC

passive imaging

Author

Vessen Vassilev

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Herbert Zirath

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Vedran Furtula

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Yogesh Karandikar

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Klas Eriksson

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Proceedings of SPIE - The International Society for Optical Engineering

0277786X (ISSN) 1996756X (eISSN)

Vol. 8715 871502

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1117/12.2018397

ISBN

978-0-8194-9506-8

More information

Created

10/7/2017