Microwave losses in MgO, LaAlO3, and (La0.3Sr0.7)(Al0.65Ta0.35)O-3 dielectrics at low power and in the millikelvin temperature range
Journal article, 2014

We have investigated both the temperature and the power dependence of microwave losses for various dielectrics commonly used as substrates for the growth of high critical temperature superconductor thin films. We present measurement of niobium superconducting lambda/2 coplanar waveguide resonators, fabricated on MgO, LaAlO3, and (La0.3Sr0.7)(Al0.65Ta0.35)O-3 (LSAT), at the millikelvin temperature range and at low input power. By comparing our results with the two-level system model, we have discriminated among different dominant loss mechanisms. LSAT has shown the best results as regards the dielectric losses in the investigated regimes.

Author

Marco Arzeo

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Floriana Lombardi

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Thilo Bauch

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Applied Physics Letters

0003-6951 (ISSN) 1077-3118 (eISSN)

Vol. 104 21 212601

Subject Categories

Physical Sciences

DOI

10.1063/1.4880357

More information

Created

10/7/2017