A 80-95 GHz direct quadrature modulator in SiGe technology
Paper in proceeding, 2014

A direct carrier IQ modulator operating in the 80-95 GHz frequency range is presented. The circuit is designed and fabricated in 0.18μm SiGe technology with 170/250 GHz fT/fmax. The modulator is based on double-balanced gilbert mixer cells with on-chip quadrature LO phase shifter and consumes 23mW DC power. In single-sideband operation, the chip exhibits up to 3 dB conversion gain below 85 GHz and -1± 0.5 dB up to 95 GHz. The image rejection ratio and LO-RF isolation are as high as 25 dB and 43 dB respectively. The modulator can operate with 10 GHz of modulation bandwidth and delivers -7 dBm power in saturation. For demonstration, the circuit is tested and shown to be capable of transmitting 4Gbps BPSK signal with NRZ rectangular pulses. The active chip area is 480μm× 260μm. © 2014 IEEE.

Gilbert cell mixer

Quadrature modulator

SiGe Bipolar Transistor

Millimeter-wave

W-band

Author

[Person d201a0b8-c846-43ea-b376-fc17146679b6 not found]

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

[Person 089337e8-37a0-4855-a0e0-e25846b649ac not found]

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

[Person ee6c1c7c-4a22-494d-b363-457c26b1680f not found]

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

[Person bc65a715-d403-4005-9099-58061a726a59 not found]

Infineon Technologies

SiRF 2014 - 2014 IEEE 14th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems

56-58
978-147991523-1 (ISBN)

Subject Categories

Nano Technology

DOI

10.1109/SiRF.2014.6828530

ISBN

978-147991523-1

More information

Latest update

9/6/2018 2