A highly integrated chipset for 40 Gbps wireless D-band communication based on a 250 nm InP DHBT technology
Paper in proceeding, 2014

A highly integrated chipset comprising a transmitter (TX) and a receiver (RX) chip, based on a 250 nm InP DHBT technology for high data rate D-band (110-170 GHz) wireless communication is described. The chipset is designed for point-to-point wireless communication for 4G and 5G mobile communication infrastructure, high data rate backhaul, low-latency wireless HDTV transmission and >40 Gbps transmission over dielectric waveguide. The measured RX conversion gain is 26 dB, with a noise figure of 9 dB. The measured TX conversion gain is 20 dB. A maximum QPSK data rate of 44 Gbps is demonstrated, which exceeds the present state-of-the art in the D-band by a factor of 2.

InP DHBT

D-band

Wireless communication

RX/TX

QPSK

BPSK

Author

Sona Carpenter

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Zhongxia Simon He

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

M. Bao

Ericsson

Herbert Zirath

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC

1550-8781 (ISSN)


9781479936229 (ISBN)

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1109/CSICS.2014.6978535

ISBN

9781479936229

More information

Latest update

11/19/2018