Strain induced ferroelectrosity in epitaxial SrTiO3 films
Journal article, 2001

Microwave performances of planar capacitors formed on epitaxial SrTiO 3 (STO) films reveal that two-dimensional, in-plane strain in the film lead to a formation of a stable non-cubic, low symmetry ferroelectric phase. The residual polarization vector has two stable states, normal to the film surface, and may be switched under applied DC bias. Due to the charges in surface/interface levels, the films may contain either a single or opposing domains

thin film

Strontium Titanate

strain

phase transition

interface

Author

[Person 922153e5-9bfc-4119-be53-09b9f13e613c not found]

Department of Microelectronics and Nanoscience

[Person 44303944-c2fc-4ba7-bf99-3c8759aa8e68 not found]

[Person c2e8e916-d25b-4125-b8e6-cdc2cfab696c not found]

Department of Microelectronics

[Person 014dd001-0fc9-4b82-b7de-892d285aa0a2 not found]

Department of Physics

Integrated Ferroelectrics

1058-4587 (ISSN)

Vol. 33 1-4 311-321

Subject Categories

Condensed Matter Physics

DOI

10.1080/10584580108222313

More information

Created

10/7/2017