Strain induced ferroelectrosity in epitaxial SrTiO3 films
Journal article, 2001

Microwave performances of planar capacitors formed on epitaxial SrTiO 3 (STO) films reveal that two-dimensional, in-plane strain in the film lead to a formation of a stable non-cubic, low symmetry ferroelectric phase. The residual polarization vector has two stable states, normal to the film surface, and may be switched under applied DC bias. Due to the charges in surface/interface levels, the films may contain either a single or opposing domains

thin film

Strontium Titanate

strain

phase transition

interface

Author

Spartak Gevorgian

Department of Microelectronics and Nanoscience

Peter Petrov

Saeed Abadei

Department of Microelectronics

Zdravko Ivanov

Department of Physics

Integrated Ferroelectrics

1058-4587 (ISSN) 16078489 (eISSN)

Vol. 33 1-4 311-321

Subject Categories

Condensed Matter Physics

DOI

10.1080/10584580108222313

More information

Created

10/7/2017