Intrinsic homogeneous linewidth and broadening mechanisms of excitons in monolayer transition metal dichalcogenides
Journal article, 2015
Author
G. Moody
The University of Texas at Austin
National Institute of Standards and Technology (NIST)
C. Kavir Dass
The University of Texas at Austin
K. Hao
The University of Texas at Austin
C. H. Chen
Feng Chia University
L. J. Li
King Abdullah University of Science and Technology (KAUST)
A. Singh
The University of Texas at Austin
K. Tran
The University of Texas at Austin
G. Clark
University of Washington
X. Xu
University of Washington
Gunnar Berghäuser
Technische Universität Berlin
Ermin Malic
Chalmers, Applied Physics, Condensed Matter Theory
A. Knorr
Technische Universität Berlin
X. Li
The University of Texas at Austin
Nature Communications
2041-1723 (ISSN) 20411723 (eISSN)
Vol. 6 Art. no. 8315- 8315Graphene-Based Revolutions in ICT And Beyond (Graphene Flagship)
European Commission (EC) (EC/FP7/604391), 2013-10-01 -- 2016-03-31.
Subject Categories
Physical Sciences
Metallurgy and Metallic Materials
DOI
10.1038/ncomms9315
PubMed
26382305