Effects of buffer layer preparation and Bi concentration on InGaAsBi epilayers grown by gas source molecular beam epitaxy
Journal article, 2015
InGaAsBi
molecular beam epitaxy
dilute bismide
Author
S. X. Zhou
Chinese Academy of Sciences
M. Qi
Chinese Academy of Sciences
L. K. Ai
Chinese Academy of Sciences
A. H. Xu
Chinese Academy of Sciences
Shu Min Wang
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
Published in
Semiconductor Science and Technology
0268-1242 (ISSN) 1361-6641 (eISSN)
Vol. 30Issue 12p. Art. no. 125001- art. no 125001Categorizing
Subject Categories
Materials Engineering
Condensed Matter Physics
Identifiers
DOI
10.1088/0268-1242/30/12/125001